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5 selected papers from the last 5 years
- A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields
P Udvarhelyi, T Clua-Provost, A Durand, J Li, JH Edgar, B Gil, G Cassabois, V Jacques, A Gali
npj Computational Materials 9 (1), 150
- An L-band emitter with quantum memory in silicon
P Udvarhelyi, A Pershin, P Deák, A Gali
npj Computational Materials 8 (1), 262
- Identification of a telecom wavelength single photon emitter in silicon
P Udvarhelyi, B Somogyi, G Thiering, A Gali
Physical review letters 127 (19), 196402
- Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC
P Udvarhelyi, G Thiering, N Morioka, C Babin, F Kaiser, D Lukin, T Ohshima, J Ul-Hassan, N T Son,
J Vučković, J Wrachtrup, A Gali
Physical Review Applied 13 (5), 054017
- Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
P Udvarhelyi, R Nagy, F Kaiser, SY Lee, J Wrachtrup, A Gali
Physical Review Applied 11 (4), 044022
Preprints
- Hopping of the center-of-mass of single G centers in silicon-on-insulator
A Durand, Y Baron, P Udvarhelyi, F Cache, T Herzig, M Khoury, S Pezzagna, J Meijer, J-M Hartmann, S Reboh,
M Abbarchi, I Robert-Philip, A Gali, J-M Gérard, V Jacques, G Cassabois, A Dréau
arXiv preprint arXiv:2404.15069
- Quantum communication networks with defects in silicon carbide
S Ecker, M Fink, T Scheidl, P Sohr, R Ursin, MJ Arshad, C Bonato, P Cilibrizzi, A Gali, P Udvarhelyi, A Politi,
O J Trojak, M Ghezellou, J Ul Hassan, I G Ivanov, N T Son, G Burkard, B Tissot, J Hendriks, C M Gilardoni,
C H van der Wal, C David, T Astner, P Koller, M Trupke
arXiv preprint arXiv:2403.03284
- Solid state defect emitters with no electrical activity
P Li, S Li, P Udvarhelyi, B Huang, A Gali
arXiv preprint arXiv:2310.09849
Published papers
- Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide
M Krumrein, R Nold, F Davidson-Marquis, A Bourama, L Niechziol, T Steidl, R Peng, J Körber, R Stöhr, N Gross,
J Smet, J Ul-Hassan, P Udvarhelyi, A Gali, F Kaiser, J Wrachtrup
ACS Photonics 2024
- Vacancy-related color centers in two-dimensional silicon carbide monolayers
M Mohseni, IA Sarsari, S Karbasizadeh, P Udvarhelyi, Q Hassanzada, T Ala-Nissila, A Gali
Physical Review Materials 8 (5), 056201
- Strain engineering for transition-metal defects in SiC
B Tissot, P Udvarhelyi, A Gali, G Burkard
Physical Review B 109 (5), 054111
- Optically active spin defects in few-layer thick hexagonal boron nitride
A Durand, T Clua-Provost, F Fabre, P Kumar, J Li, JH Edgar, P Udvarhelyi, A Gali, X Marie, C Robert,
JM Gérard, B Gil, G Cassabois, V Jacques
Physical Review Letters 131 (11), 116902
- Positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC
M Mohseni, P Udvarhelyi, G Thiering, A Gali
Physical Review Materials 7 (9), 096202
- A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields
P Udvarhelyi, T Clua-Provost, A Durand, J Li, JH Edgar, B Gil, G Cassabois, V Jacques, A Gali
npj Computational Materials 9 (1), 150
- Carbon cluster emitters in silicon carbide
P Li, P Udvarhelyi, S Li, B Huang, A Gali
Physical Review B 108 (8), 085201
- Ab Initio Study of (100) Diamond Surface Spins
JP Chou, P Udvarhelyi, NP De Leon, A Gali
Physical Review Applied 20 (1), 014040
- Controlled Surface Modification to Revive Shallow NV– Centers
JN Neethirajan, T Hache, D Paone, D Pinto, A Denisenko, R Stöhr, P Udvarhelyi, A Pershin, A Gali, J Wrachtrup, K Kern, A Singha
Nano Letters 23 (7), 2563-2569
- The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium
P Deák, P Udvarhelyi, G Thiering, A Gali
Nature Communications 14 (1), 361
- An L-band emitter with quantum memory in silicon
P Udvarhelyi, A Pershin, P Deák, A Gali
npj Computational Materials 8 (1), 262
- Detection of single W-centers in silicon
Y Baron, A Durand, P Udvarhelyi, T Herzig, M Khoury, S Pezzagna, J Meijer, I Robert-Philip, M Abbarchi,
J-M Hartmann, V Mazzocchi, J-M Gérard, A Gali, V Jacques, G Cassabois, A Dréau
ACS photonics 9 (7), 2337-2345
- Ultraviolet quantum emitters in hexagonal boron nitride from carbon clusters
S Li, A Pershin, G Thiering, P Udvarhelyi, A Gali
The Journal of Physical Chemistry Letters 13 (14), 3150-3157
- Carbon defect qubit in two-dimensional WS2
S Li, G Thiering, P Udvarhelyi, V Ivády, A Gali
Nature communications 13 (1), 1210
- Identification of a telecom wavelength single photon emitter in silicon
P Udvarhelyi, B Somogyi, G Thiering, A Gali
Physical review letters 127 (19), 196402
- Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN
S Li, JP Chou, A Hu, MB Plenio, P Udvarhelyi, G Thiering, M Abdi, A Gali
npj Quantum Information 6 (1), 85
- Spin-controlled generation of indistinguishable and distinguishable photons
from silicon vacancy centres in silicon carbide
N Morioka, C Babin, R Nagy, I Gediz, E Hesselmeier, D Liu, M Joliffe, M Niethammer, D Dasari, V Vorobyov, R Kolesov,
R Stöhr, J Ul-Hassan, N T Son, T Ohshima, P Udvarhelyi, G Thiering, A Gali, J Wrachtrup, F Kaiser
Nature communications 11 (1), 2516
- Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC
P Udvarhelyi, G Thiering, N Morioka, C Babin, F Kaiser, D Lukin, T Ohshima, J Ul-Hassan, N T Son,
J Vučković, J Wrachtrup, A Gali
Physical Review Applied 13 (5), 054017
- Electrically driven optical interferometry with spins in silicon carbide
KC Miao, A Bourassa, CP Anderson, SJ Whiteley, AL Crook, SL Bayliss, G Wolfowicz, G Thiering, P Udvarhelyi, V Ivády,
H Abe, T Ohshima, Á Gali, D D Awschalom
Science Advances 5 (11), eaay0527
- High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, J Ul Hassan, R Karhu, I G Ivanov, N T Son,
J R Maze, T Ohshima, Ö O Soykal, A Gali, S-Y Lee, F Kaiser, J Wrachtrup
Nature communications 10 (1), 1-8
- Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
P Udvarhelyi, R Nagy, F Kaiser, SY Lee, J Wrachtrup, A Gali
Physical Review Applied 11 (4), 044022
- Ab Initio Spin-Strain Coupling Parameters of Divacancy Qubits in Silicon Carbide
P Udvarhelyi, A Gali
Physical Review Applied 10 (5), 054010
- Spin-strain interaction in nitrogen-vacancy centers in diamond
P Udvarhelyi, VO Shkolnikov, A Gali, G Burkard, A Pályi
Physical Review B 98 (7), 075201
- Ab initio theory of the N2V defect in diamond for quantum memory implementation
P Udvarhelyi, G Thiering, E Londero, A Gali
Physical Review B 96 (15), 155211
Contacts
Address
University of California, Los Angeles
Department of Chemistry and Biochemistry
W. G. Young Hall
607 Charles E Young Dr E, Los Angeles, CA 90095
Email
udvarhelyi@ucla.edu